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Oxygen pressure dependent growth of pulsed laser deposited LiNbO3 films on diamond for surface acoustic wave device application  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:Oxygen pressure dependent growth of pulsed laser deposited LiNbO3 films on diamond for surface acoustic wave device application

作者:Wang, Xinchang[1,2];Liang, Yu[3];Tian, Sifang[1];Man, Weidong[4];Jia, Jianfeng[1]

第一作者:Wang, Xinchang

通讯作者:Wang, XC[1]

机构:[1]Zhengzhou Univ, Sch Phys & Engn, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China;[2]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China;[3]Xinxiang Univ, Coll Chem & Chem Engn, Xinxiang 453003, Peoples R China;[4]Wuhan Inst Technol, Hubei Prov Key Lab Plasma Chem & Adv Mat, Wuhan 430073, Peoples R China

第一机构:Zhengzhou Univ, Sch Phys & Engn, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China

通讯机构:[1]corresponding author), Zhengzhou Univ, Sch Phys & Engn, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China.

年份:2013

卷号:375

起止页码:73-77

外文期刊名:JOURNAL OF CRYSTAL GROWTH

收录:;EI(收录号:20132016331681);Scopus(收录号:2-s2.0-84877320090);WOS:【SCI-EXPANDED(收录号:WOS:000320586000014)】;

基金:This work was financially supported by the National Nature Science Foundation (NNSF) of China (No. 50702051) and the of State Key Laboratory of Silicon Materials scholar fund (SKL2008-4).

语种:英文

外文关键词:Crystal structure; Laser epitaxy; Lithium niobate; Piezoelectric materials

摘要:LiNbO3 films were grown on nanocrystalline diamond (NCD)/Si substrates with amorphous SiO2 buffer layer by pulsed laser deposition technique at various oxygen pressures ranging from 10 Pa to 80 Pa. The stoichiometric LiNbO3 ceramic target was used. Significant effects of oxygen pressure on c-axis orientation, stoichiometry, crystallinity and surface morphology of LiNbO3 films were investigated. It was found that the above properties are strongly dependent on the oxygen pressure. Completely c-axis oriented LiNbO3 films with the average surface roughness of 9.0 nm could be achieved under an optimum oxygen pressure of 40 Pa. Surface acoustic wave devices were fabricated and characterized utilizing the structure of LiNbO3/SiO2/NCD/Si. (C) 2013 Elsevier B.V. All rights reserved.

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