文献类型：期刊文献

中文题名：Vertical GaN Shottky barrier diode with thermally stable TiN anode

英文题名：Vertical GaN Shottky barrier diode with thermally stable TiN anode*

作者：Liu, Da-Ping[1];Li, Xiao-Bo[2];Pu, Tao-Fei[2];Li, Liu-An[3];Cheng, Shao-Heng[4];Wang, Qi-Liang[4]

第一作者：Liu, Da-Ping

通讯作者：Pu, TF[1];Wang, QL[2]

机构：[1]Xinxiang Univ, Dept Phys, Xinxiang 453003, Henan, Peoples R China;[2]Tokushima Univ, Inst Technol & Sci, Tokushima 7708506, Japan;[3]Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;[4]Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

第一机构：新乡学院物理与电子工程学院

通讯机构：[1]corresponding author), Tokushima Univ, Inst Technol & Sci, Tokushima 7708506, Japan;[2]corresponding author), Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China.

年份：2021

卷号：30

期号：3

中文期刊名：中国物理B：英文版

外文期刊名：CHINESE PHYSICS B

收录：CSTPCD;;EI(收录号：20211310139400);Scopus(收录号：2-s2.0-85103109129);WOS:【SCI-EXPANDED(收录号:WOS:000622302600001)】；CSCD:【CSCD2021_2022】；

基金：Project supported by the Open Project of State Key Laboratory of Superhard Materials, Jilin University (Grant No. 201906), Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics (Grant No. 202006), and the Science and Technology Program of Ningbo (Grant No. 2019B10129).

语种：英文

中文关键词：GaN;Vertical Schottky barrier diode;TiN;interface quality

外文关键词：GaN; Vertical Schottky barrier diode; TiN; interface quality

摘要：Vertical GaN Schottky barrier diodes with Ti N anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 m?·cm2, respectively.The current-voltage curves show rectifying characteristics under different temperatures from 25℃ to 200℃, implying a good thermal stability of Ti N/Ga N contact. The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at Ti N/Ga N interface. The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage.
Vertical GaN Schottky barrier diodes with TiN anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 m omega.cm(2), respectively. The current-voltage curves show rectifying characteristics under different temperatures from 25 degrees C to 200 degrees C, implying a good thermal stability of TiN/GaN contact. The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at TiN/GaN interface. The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage.