文献类型：会议论文

英文题名：Design of a low-power bandgap current reference

作者：Ru, Bei[1]

第一作者：茹蓓

通讯作者：Ru, B.

机构：[1] Institute of Computer and Information Engineering, Xinxiang University, Xinxiang, China

第一机构：新乡学院计算机与信息工程学院

会议论文集：2010 International Conference on E-Product E-Service and E-Entertainment, ICEEE2010

会议日期：7 November 2010 through 9 November 2010

会议地点：Henan

语种：英文

外文关键词：CMOS integrated circuits - Computer circuits - Electric power utilization - Energy gap - Integrated circuit design - Metals - MOS devices - Oxide semiconductors - Temperature

摘要：A low-power complementary metal oxide semiconductor (CMOS) bandgap current reference is proposed under the 1.8V supply voltage. The temperature compensation current generator was used in order to obtain an accurate 5?A current with lower temperature coefficient. Sub-threshold technology and advanced startup circuit were adopted to decrease the circuit power consumption. The current reference has been simulated based on SMIC 0.18μm CMOS technology. The simulation results show that it has significantly low power and low sensitivity to the temperature. The power consumption is only 35.22μW. The temperature coefficient is 42.62ppm/°C under typical process with the temperature range from -40°C to 125°C. ?2010 IEEE.