文献类型：期刊文献

英文题名：Effect of mechanical attrition on anodizing of DC-etched aluminum foil for electrolytic capacitor

作者：Zhu, S.Q.[1]; Ban, C.L.[2]; Jiang, L.J.[3]

第一作者：Zhu, S.Q.

通讯作者：Ban, C.L.

机构：[1] School of Computer Science, Liaocheng University, Liaocheng, 252059, China; [2] School of Materials Science and Engineering, Liaocheng University, Liaocheng, 252059, China; [3] College of Physics and Electronic Engineering, Xinxiang University, Xinxiang, 453003, China

第一机构：School of Computer Science, Liaocheng University, Liaocheng, 252059, China

年份：2015

卷号：26

期号：8

起止页码：5703-5707

外文期刊名：Journal of Materials Science: Materials in Electronics

收录：EI(收录号：20152000842385);Scopus(收录号：2-s2.0-84937521238)

基金：The work is financially supported by the Research Key Project of Science and Technology of Education Bureau of Henan Province, China (14A140030) and Innovation Talants Program of Science and Technology of Institution of Higher Education of Henan Province, China (Grant No. 14HASTIT044).

语种：英文

外文关键词：Alumina - Aluminum foil - Aluminum oxide - Boric acid - Capacitance - Dielectric films - Microstructure - Morphology - Oxide films - Surface morphology

摘要：On tunnel-etched aluminum foil for electrolytic capacitor, the barrier dielectric film, γ-Al2O3, was formed by a mechanical attrition enhanced anodizing process. The anodizing was conducted in a traditional boric acid solution and the mechanical attrition (MA) action was applied by impact of nano-sized α-Al2O3 particles on the sample surface with a special vibrating frequency. The surface morphology of anodized foil was observed with SEM. The morphology and microstructure of the anodized oxide were examined by SEM, TEM and XRD. The capacitance and withstanding voltage of the oxide film were also determined with LCR meter and small-current charging. The results show that MA has significant effects on the microstructure and performance of Al anodic film. The MA-assisted barrier film becomes thinner, more crystallized but with less structure defects than the traditional one without MA, leading to increase in the film capacitance and withstanding voltage. ? 2015, Springer Science+Business Media New York.