文献类型：期刊文献

英文题名：Strain effects on high-order harmonic generation in solids

作者：Shao, Tian-Jiao[1,2];Xu, Yan[3];Huang, Xiao-Huan[4];Bian, Xue-Bin[1]

第一作者：Shao, Tian-Jiao

通讯作者：Bian, XB[1]

机构：[1]Chinese Acad Sci, Wuhan Inst Phys & Math, State Key Lab Magnet Resonance & Atom & Mol Phys, Wuhan 430071, Hubei, Peoples R China;[2]Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China;[3]Xinxiang Univ, Coll Phys & Elect Engn, Xinxiang 453003, Peoples R China;[4]Hubei Normal Univ, Coll Chem & Chem Engn, Hubei Key Lab Pollutant Anal & Reuse Technol, Huangshi 435002, Peoples R China

第一机构：Chinese Acad Sci, Wuhan Inst Phys & Math, State Key Lab Magnet Resonance & Atom & Mol Phys, Wuhan 430071, Hubei, Peoples R China

通讯机构：[1]corresponding author), Chinese Acad Sci, Wuhan Inst Phys & Math, State Key Lab Magnet Resonance & Atom & Mol Phys, Wuhan 430071, Hubei, Peoples R China.

年份：2019

卷号：99

期号：1

外文期刊名：PHYSICAL REVIEW A

收录：;EI(收录号：20190506453465);Scopus(收录号：2-s2.0-85060702592);WOS:【SCI-EXPANDED(收录号:WOS:000456775500007)】；

基金：The authors thank Tao-Yuan Du, Xin-Qiang Wang, Dong Tang, Mu-Zi Li, Ling-Jie Lv, Jia-Qi Liu, Jing-Xue Liu, and Ming-Hu Yuan for helpful discussions. This work is supported by the National Natural Science Foundation of China (Grants No. 91850121, No. 11674363, and No. 21501055) and the Ninth Group of Key Disciplines in Henan Province (Grant No. 2018119).

语种：英文

外文关键词：Energy gap - Harmonic generation - II-VI semiconductors - Oxide minerals - Wide band gap semiconductors - Zinc oxide - Zinc sulfide

摘要：Laser-induced high harmonic generation (HHG) in solids strongly depends on the band structure of the target. In this work, we studied the band structure of bulk wurtzite ZnO under different strains. The changes of band structure induced by shear, uniaxial, biaxial, and isotropic strains are compared. It is found that the band gap can be narrowed or widen by modulating the external conditions, which offers an efficient way to engineer the wide-gap crystals to produce HHG. The strain effects on HHG are investigated by numerically solving the semiconductor Bloch equations. Our calculations show that the HHG yield depends sensitively on the change of band structure caused by stress- and temperature-induced strains. In addition, we found that the emission times of HHG and the ratio between inter and intraband contributions to the total solid HHG spectra can be controlled by the magnitude of strain imposed on the solid targets.