文献类型：会议论文

英文题名：Study on high quality polycrystalline silicon p/n films fabrication through recrystallization by RTP

作者：Zhang, Liwei[1,3];Mei, Xinli[3];Lu, Jingxiao[2];Zhang, Rui[1];Chu, Shiyong[3];Wen, Shutang[3]

第一作者：Zhang, Liwei;张丽伟

通讯作者：Zhang, LW[1]

机构：[1]Zhengzhou Univ, Sch Mat Sci & Engn, Postdoctoral Stn, Zhengzhou 450052, Peoples R China;[2]Zhengzhou Univ, Minist Educ, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China;[3]Xinxiang Univ, Xinxiang 453000, Peoples R China

第一机构：Zhengzhou Univ, Sch Mat Sci & Engn, Postdoctoral Stn, Zhengzhou 450052, Peoples R China

通讯机构：[1]corresponding author), Zhengzhou Univ, Sch Mat Sci & Engn, Postdoctoral Stn, Zhengzhou 450052, Peoples R China.

会议论文集：3rd International Conference on Manufacturing Science and Engineering (ICMSE 2012)

会议日期：MAR 27-29, 2012

会议地点：Xiamen, PEOPLES R CHINA

语种：英文

外文关键词：Aluminum film; Npp plus structure; Crystallization

摘要：Aluminum films were evaporated on quartz substrates, and then an npp+ structure was formed by a p/n junction deposited on the aluminum film. The Raman, XRD and SEM were used to analyze the crystallization and components of the samples before and after annealed. The results showed that they were compact and almost 100% in crystallization after annealing and carrier motility also increase. The mechanism of the rapid thermal process is also proposed, its superior effect mainly contributes to the photoelectron induced diffusion process, in which the short wavelength of the tungsten plays an important role.