文献类型：期刊文献

中文题名：氢在微晶硅薄膜低温沉积及退火过程中的影响

英文题名：Influence of Hydrogen on Microcrystalline Silicon Thin Film in Low Temperature Deposition and Annealling Process

作者：李瑞[1,2];樊志琴[1];张丽伟[3];蔡根旺[1];杨培霞[1]

第一作者：李瑞

机构：[1]河南工业大学,河南郑州450052;[2]郑州大学,河南郑州450052;[3]新乡学院,河南新乡453000

第一机构：河南工业大学,河南郑州450052

年份：2009

卷号：28

期号：2

起止页码：370-373

中文期刊名：硅酸盐通报

外文期刊名：Bulletin of the Chinese Ceramic Society

收录：CSTPCD;;北大核心:【北大核心2008】；CSCD:【CSCD2011_2012】；

基金：河南工业大学科研基金(NO.06XJC037);2008新乡市科技发展计划项目(NO.08G064)

语种：中文

中文关键词：微晶硅薄膜;PECVD;低温沉积;退火

外文关键词：microcrystalline silicon thin film ; PECVD ; low temperature deposition ; anneal

摘要：采用等离子体增强化学气相沉积(PECVD)法,在玻璃衬底上不同的氢稀释比下低温制备了微晶硅(μc-Si:H)薄膜。利用拉曼(Raman)散射谱研究显示当H2稀释比从95%升高到99%,所得硅膜晶粒大小从2.98nm增加8.79nm,晶化率从24%增加到91%;暗电导测试结果从1.32×10-6scm-1增加到7.24×10-3scm-1;沉积速率却大大降低。沉积出的薄膜在进行高温炉退火后,扫描电镜(SEM)显示样品表面孔洞变大增多,推测是氢逸出所致。
Microcrystalline silicon thin films was deposited in low temperature on glass substrates and different H2 dilution by PECVD method. The Raman shift of samples show that when the HE dilution increased from 95% to 99% ,the crystal size and the crystalline ratio will increase from 2.98 nm to 8.79 nm, and 24% to 91% respectively. The dark-conductivity also increses. But the deposition speed slows down. All the results can be caused by hydrogen. It can be found from the SEM pictures that the holes on the the film surface become more and larger after they are annealled. It can also be concluded on hydrogen-escape in the film.